PART |
Description |
Maker |
FGD4536 FGD4536TM |
360V PDP Trench IGBT 360 V PDP Trench IGBT
|
Fairchild Semiconductor
|
ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
M57704SL 57704SL |
360-380MHz 12.5V,13W,FM MOBILE RADIO 360 - 380MHz 12.5V3W,调频移动通信 360-380MHz 12.5V /13W /FM MOBILE RADIO 360-380MHZ, 12.5V, 13W, FM MOBILE RADIO From old datasheet system
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
ISL9N304AP3 ISL9N304AS3ST ISL9N304AS3STL86Z |
75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?/a> N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 4.5Mз N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
FDD5810 FDD581007 FDD5810-F085 |
N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm N-Channel Logic Level Trench㈢ MOSFET N-Channel Logic Level Trench? MOSFET
|
Fairchild Semiconductor
|
FMP76-010T |
Trench P & N-Channel Power MOSFET Common Drain Topology 62 A, 100 V, 0.011 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET PLASTIC, ISOPLUS, I4-PAK-5
|
IXYS Corporation IXYS, Corp.
|
FDMS3672 |
N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm 22 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
PMXB350UPE |
P-channel Trench MOSFET
|
NXP
|
PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET
|
NXP Semiconductors
|
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